Structural and Optoelectronic Properties of ZnSnO3 Semiconductor

Abstract

ZnSnO3 is a promising ternary oxide semiconductor owing to its favorable structural, electrical, and optoelectronic properties. In this work, ZnSnO3 samples were synthesized using a simple and cost-effective technique and characterized through thermoelectric power (TEP), electrical, and photosensing studies. Thermoelectric power measurements revealed a positive Seebeck coefficient, indicating p-type conductivity and dominant hole transport. Electrical studies showed temperature-dependent conductivity, confirming the semiconducting behavior of ZnSnO3. Photosensing measurements under ultraviolet (UV) illumination demonstrated a significant enhancement in photocurrent compared to dark current, along with stable and repeatable photoresponse. The observed photosensingbehavior is attributed to efficient generation of charge carriers and surface-related trapping mechanisms under light illumination. The combined results highlight the potential of ZnSnO₃ for applications in photodetectors and optoelectronic devices.